TY - JOUR AU - Hidayat, Yuniawan AU - Rahmawati, Fitria AU - Heraldy, Eddy AU - Nugrahaningtyas, Khoirina AU - Nurcahyo, IF PY - 2022/09/30 Y2 - 2024/03/29 TI - The Effect Of Sulphur (S) Doping and K+ Adsorption To The Electronic Properties Of Graphene: A Study By DFTB Method JF - Jurnal Riset Kimia JA - J.Ris.Kim. VL - 13 IS - 2 SE - Articles DO - 10.25077/jrk.v13i2.485 UR - http://jrk.fmipa.unand.ac.id/index.php/jrk/article/view/485 SP - 130-137 AB - <p>A study on the effect of S doping and K<sup>+</sup> adsorption to the electronic properties of graphene has been conducted by DFTB (Density Functional Tight Binding) calculation. The supercell of 40 x 40 x 1 configured from the 4x4x1 unit cell of graphene was optimized. The calculation shows that the Fermi level of graphene shifted from -4.67 eV into -3.57 eV after S doping. In addition, the S presence caused the formation of gap within the Dirac K of valence band and conduction band. Meanwhile, K<sup>+</sup> charge distribution was dominantly occurred within the S-graphene than the graphene.</p> ER -